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      40W GaN RF Module 1160–1280MHz with Circulator Isolator for Integration | Chipomi

      40W GaN RF Module 1160–1280MHz with Circulator Isolator for Integration | Chipomi
      40W GaN RF Module 1160–1280MHz with Circulator Isolator for Integration | Chipomi $175
      40W GaN RF Module 1160–1280MHz with Circulator Isolator for Integration | Chipomi
      40W GaN RF Module 1160–1280MHz with Circulator Isolator for Integration | Chipomi
      40W GaN RF Module 1160–1280MHz with Circulator Isolator for Integration | Chipomi
      40W GaN RF Module 1160–1280MHz with Circulator Isolator for Integration | Chipomi
      40W GaN RF Module 1160–1280MHz with Circulator Isolator for Integration | Chipomi
      40W GaN RF Module 1160–1280MHz with Circulator Isolator for Integration | Chipomi
      40W GaN RF Module 1160–1280MHz with Circulator Isolator for Integration | Chipomi
      40W GaN RF Module 1160–1280MHz with Circulator Isolator for Integration | Chipomi
      40W GaN RF Module 1160–1280MHz with Circulator Isolator for Integration | Chipomi
      40W GaN RF Module 1160–1280MHz with Circulator Isolator for Integration | Chipomi
      40W GaN RF Module 1160–1280MHz with Circulator Isolator for Integration | Chipomi
      40W GaN RF Module 1160–1280MHz with Circulator Isolator for Integration | Chipomi
      40W GaN RF Module 1160–1280MHz with Circulator Isolator for Integration | Chipomi
      40W GaN RF Module 1160–1280MHz with Circulator Isolator for Integration | Chipomi
      40W GaN RF Module 1160–1280MHz with Circulator Isolator for Integration | Chipomi
      40W GaN RF Module 1160–1280MHz with Circulator Isolator for Integration | Chipomi
      40W GaN RF Module 1160–1280MHz with Circulator Isolator for Integration | Chipomi
      In stock Product code: CHIP-739154
      ACASOM Brand

      $175

      Ex Tax: $175

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      Description

      The ACASOM 1160–1280MHz 40W GaN circulator isolator module is engineered for integration into professional radio frequency environments. Built on Gallium Nitride technology, it provides strong power density, improved efficiency, and reliable operation under elevated thermal conditions.

      Delivering 40W (46dBm) output power across a wide frequency range, the module supports consistent RF performance. Compared with traditional LDMOS architectures, GaN technology enables better thermal stability for extended operational cycles.

      The ceramic vacuum-sealed structure helps maintain low junction temperatures, while open-circuit protection enhances reliability and supports an MTBF exceeding 10,000 hours.

      With a standard SMA-F connector, the module integrates easily into engineering platforms and infrastructure-level RF systems.

      Technical Specifications:

      ParameterValue
      Frequency Range1160–1280MHz
      Operating Voltage28V
      Flatness±0.5dB
      Output Power40W / 46dBm
      Current3.2A @28V
      Efficiency45% @46dBm
      LED StatusRed
      Operating Temperature-30℃～85℃
      Storage Temperature-40℃～150℃
      Humidity＜95%RH
      RF PortSMA-F
      Power Socket15cm red/black wire
      Shell MaterialAluminum
      Dimensions132×53×17mm
      Net Weight0.25kg

      Why Choose This Module:

      • Advanced GaN efficiency.
      • Stable RF output across operating range.
      • Compact high-power design.
      • Standard SMA interface for integration.
      • Durable aluminum enclosure.
      • Designed for professional RF applications.

      Applications:

      • RF engineering systems.
      • Laboratory testing platforms.
      • Telecommunications projects.
      • Infrastructure RF deployment.
      • Spectrum research environments.
      • Industrial electronic platforms.

      Package Includes:

      Sweep Signal Source ×1

      Important Notes:

      • Requires 28V / 5A power supply.
      • Additional heat dissipation is recommended.
      • Attach antenna before powering the module.
      • Usage may be subject to local regulations.

      FAQ:

      1. Is this module suitable for continuous operation?
        Yes, with proper thermal management.
      2. Does it require external cooling?
        Heat dissipation is recommended.
      3. What connector does it use?
        SMA-F.
      4. What voltage is required?
        28V DC supply.
      5. Is it designed for professional integration?
        Yes, it is built for RF engineering environments.

      The ACASOM 1160–1280MHz 40W GaN RF module is designed for high-performance radio frequency integration where reliability and efficiency are essential. Leveraging Gallium Nitride technology, the module achieves strong power density and enhanced thermal resilience compared to conventional amplifier designs.

      Operating at 40W output power with 28V input, it supports demanding RF environments while maintaining predictable signal behavior. The ±0.5dB flatness contributes to stable frequency performance, supporting professional system design.

      A compact aluminum enclosure simplifies installation and assists with heat management, while the SMA-F interface ensures compatibility with widely used RF cables and configurations.

      Professionals choosing RF components from ACASOM gain access to hardware focused on consistent performance, integration flexibility, and long-term operational stability.

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      Tags: Chipomi, 40W GaN RF module, 1160-1280MHz amplifier, 28V RF module, SMA RF amplifier, professional RF component, aluminum RF housing, high power RF

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